SiCSem Private Limited has received government approval from the Falta Special Economic Zone committee to build a silicon carbide (SiC) semiconductor facility on the outskirts of Bhubaneswar, Odisha, with a total investment of Rs 34.06 billion. The project will span approximately 22 acres within the Electronic System Design and Manufacturing (ESDM) Park in Info Valley-II.
Of the total investment, approximately Rs 30.06 billion is earmarked for plant and machinery, split between around Rs 7.93 billion worth of indigenous equipment and approximately Rs 22.14 billion of imported equipment.
The facility will manufacture SiC diodes and SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), specialised power semiconductors used in electric vehicles, renewable energy systems and industrial power equipment. Once fully operational, the plant is expected to produce around 4.8 million SiC diodes and 91.2 million SiC MOSFETs annually, handling the entire process in-house including fabrication, assembly, testing, marking and packaging.
SiCSem expects to generate export turnover of approximately Rs 70.43 billion over its first five years of operation, with net foreign exchange earnings estimated at around Rs 45.23 billion during the same period. The project is also expected to create around 1,270 direct jobs, adding to the skilled workforce being developed around Odisha’s growing electronics and semiconductor manufacturing base.